SiC MOSFETs in TOLL package achieve miniaturisation and high-power capability

ROHM has begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages deliver approximately 39% improved thermal performance. This allows high-power handling despite their compact size and low profile. It is ideal for industrial equipment such as server power supplies and ESS, where power density is increasing and low-profile components are required to facilitate miniaturised product design.

In applications such as AI servers and compact PV inverters, the trend toward higher power ratings is occurring alongside the contradictory demand for miniaturisation, demanding power MOSFETs to achieve higher power density. Particularly in totem pole PFC circuits for slim power supplies, often called 'the pizza box type', stringent requirements demand thicknesses of 4mm or less for discrete semiconductors.

The company's new product fulfils these needs by lowering component footprint by approximately 26% and achieving a low profile of 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while a drain-source rated voltage of 650V limits most standard TOLL package products, its new products support up to 750V. This allows lower gate resistance and a wider safety margin against surge voltages, resulting in reduced switching losses.

The lineup comprises six models with on-resistance ranging from 13mΩ to 65mΩ. Simulation models for all six new products are available on the company's official website, supporting rapid circuit design evaluation.

Application examples include Industrial equipment such as power supplies for AI servers and data centres, PV inverters, ESS, and consumer equipment, e.g., general power supplies.